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Bootstrap Diode Part
Symbol
V F
t rr
Parameter
Forward Voltage
Reverse Recovery Time
Conditions
I F = 0.1A, T C = 25°C
I F = 0.1A, T C = 25°C
Min.
-
-
Typ.
2.5
80
Max.
-
-
Units
V
ns
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Built in Bootstrap Diode V F -I F Characteristic
T C =25 ℃
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
V F [V]
Note:
6. Built in bootstrap diode includes around 15 ? resistance characteristic.
Figure 6. Built in Bootstrap Diode Characteristics
Recommended Operating Conditions
Symbol
V PN
V CC
V BS
Parameter
Supply Voltage
Control Supply Voltage
High-side Bias Voltage
Conditions
Applied between P - N U , N V , N W
Applied between V CC(H) , V CC(L) - COM
Applied between V B(U) - V S(U) , V B(V) - V S(V) ,
Min.
-
13.5
13.0
Value
Typ.
300
15
15
Max.
400
16.5
18.5
Units
V
V
V
V B(W) - V S(W)
dV CC /dt,
Control supply variation
-1
-
1
V/ μ s
dV BS /dt
t dead
Blanking Time for Preventing For Each Input Signal
1.5
-
-
μ s
Arm-short
f PWM
V SEN
PWM Input Signal
Voltage for Current Sensing
-40 ° C ≤ T C ≤ 125°C, -40 ° C ≤ T J ≤ 150°C
Applied between N U , N V , N W - COM
-
-4
-
20
4
kHz
V
(Including surge voltage)
FSBF3CH60B Rev. C
8
www.fairchildsemi.com
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